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mtd: nand: samsung: Disable subpage writes on E-die NAND 

Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E)
does not support partial page programming, so disable subpage writes
for it. Manufacturing process is stored in lowest two bits of 5th ID
byte.

Signed-off-by: Ladislav Michl <ladis@linux-mips.org>
Signed-off-by: Boris Brezillon <boris.brezillon@free-electrons.com>
This commit is contained in:
Ladislav Michl 2018-01-09 14:19:11 +01:00 committed by Boris Brezillon
parent 6cbefbdcec
commit 09ec417b0e
1 changed files with 17 additions and 4 deletions
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21
drivers/mtd/nand/nand_samsung.c
View File

@ -92,10 +92,23 @@ static void samsung_nand_decode_id(struct nand_chip *chip)
} else {
nand_decode_ext_id(chip);
/* Datasheet values for SLC Samsung K9F4G08U0D-S[I|C]B0(T00) */
if (nand_is_slc(chip) && chip->id.data[1] == 0xDC) {
chip->ecc_step_ds = 512;
chip->ecc_strength_ds = 1;
if (nand_is_slc(chip)) {
switch (chip->id.data[1]) {
/* K9F4G08U0D-S[I|C]B0(T00) */
case 0xDC:
chip->ecc_step_ds = 512;
chip->ecc_strength_ds = 1;
break;
/* K9F1G08U0E 21nm chips do not support subpage write */
case 0xF1:
if (chip->id.len > 4 &&
(chip->id.data[4] & GENMASK(1, 0)) == 0x1)
chip->options |= NAND_NO_SUBPAGE_WRITE;
break;
default:
break;
}
}
}
}