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mtd: nand: scan 1st and 2nd page for Macronix SLC 

Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This commit is contained in:
Brian Norris 2011-11-02 13:34:44 -07:00 committed by David Woodhouse
parent c01804edde
commit 8c34233596
1 changed files with 4 additions and 3 deletions
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7
drivers/mtd/nand/nand_base.c
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@ -3132,8 +3132,8 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
* Bad block marker is stored in the last page of each block
* on Samsung and Hynix MLC devices; stored in first two pages
* of each block on Micron devices with 2KiB pages and on
* SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan
* only the first page.
* SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
* All others scan only the first page.
*/
if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(*maf_id == NAND_MFR_SAMSUNG ||
@ -3143,7 +3143,8 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
(*maf_id == NAND_MFR_SAMSUNG ||
*maf_id == NAND_MFR_HYNIX ||
*maf_id == NAND_MFR_TOSHIBA ||
*maf_id == NAND_MFR_AMD)) ||
*maf_id == NAND_MFR_AMD ||
*maf_id == NAND_MFR_MACRONIX)) ||
(mtd->writesize == 2048 &&
*maf_id == NAND_MFR_MICRON))
chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;