Commit Graph

6 Commits

Author SHA1 Message Date
Chuanhong Guo f1541773af mtd: spinand: rework detect procedure for different READ_ID operation
Currently there are 3 different variants of read_id implementation:
1. opcode only. Found in GD5FxGQ4xF.
2. opcode + 1 addr byte. Found in GD5GxGQ4xA/E
3. opcode + 1 dummy byte. Found in other currently supported chips.

Original implementation was for variant 1 and let detect function
of chips with variant 2 and 3 to ignore the first byte. This isn't
robust:

1. For chips of variant 2, if SPI master doesn't keep MOSI low
during read, chip will get a random id offset, and the entire id
buffer will shift by that offset, causing detect failure.

2. For chips of variant 1, if it happens to get a devid that equals
to manufacture id of variant 2 or 3 chips, it'll get incorrectly
detected.

This patch reworks detect procedure to address problems above. New
logic do detection for all variants separatedly, in 1-2-3 order.
Since all current detect methods do exactly the same id matching
procedure, unify them into core.c and remove detect method from
manufacture_ops.

Tested on GD5F1GQ4UAYIG and W25N01GVZEIG.

Signed-off-by: Chuanhong Guo <gch981213@gmail.com>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Link: https://lore.kernel.org/linux-mtd/20200208074439.146296-1-gch981213@gmail.com
2020-03-09 14:50:19 +01:00
Frieder Schrempf a126483e82 mtd: spinand: Fix max_bad_eraseblocks_per_lun info in memorg
The 1Gb Macronix chip can have a maximum of 20 bad blocks, while
the 2Gb version has twice as many blocks and therefore the maximum
number of bad blocks is 40.

The 4Gb GigaDevice GD5F4GQ4xA has twice as many blocks as its 2Gb
counterpart and therefore a maximum of 80 bad blocks.

Fixes: 377e517b5f ("mtd: nand: Add max_bad_eraseblocks_per_lun info to memorg")
Reported-by: Emil Lenngren <emil.lenngren@gmail.com>
Signed-off-by: Frieder Schrempf <frieder.schrempf@kontron.de>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
2019-07-01 14:50:20 +02:00
Boris Brezillon 377e517b5f mtd: nand: Add max_bad_eraseblocks_per_lun info to memorg
NAND datasheets usually give the maximum number of bad blocks per LUN
and this number can be used to help upper layers decide how much blocks
they should reserve for bad block handling.

Add a max_bad_eraseblocks_per_lun to the nand_memory_organization
struct and update the NAND_MEMORG() macro (and its users) accordingly.

We also provide a default mtd->_max_bad_blocks() implementation.

Signed-off-by: Boris Brezillon <bbrezillon@kernel.org>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
2019-04-08 10:21:08 +02:00
Emil Lenngren f4cb4d7b46 mtd: spinand: macronix: Fix ECC Status Read
The datasheet specifies the upper four bits are reserved.
Testing on real hardware shows that these bits can indeed be nonzero.

Signed-off-by: Emil Lenngren <emil.lenngren@gmail.com>
Reviewed-by: Boris Brezillon <boris.brezillon@bootlin.com>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
2019-02-05 15:39:39 +01:00
Miquel Raynal 3dfa025f89 mtd: spinand: macronix: Add support for MX35LF2GE4AB
MX35LF2GE4AB is almost identical to MX35LF1GE4AB except it has 2 times
more eraseblocks per LUN and exposes 2 planes instead of 1.

Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com>
2018-07-18 09:24:12 +02:00
Boris Brezillon b02308af05 mtd: spinand: Add initial support for the MX35LF1GE4AB chip
Add minimal support for the MX35LF1GE4AB SPI NAND chip.

Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
2018-07-18 09:24:12 +02:00