The suffix was changed from "G" to "J" to classify between 1st generation
and 2nd generation serial NAND devices (which now belong to the Kioxia
brand).
As reference that's
1st generation device of 1Gbit product is "TC58CVG0S3HRAIG"
2nd generation device of 1Gbit product is "TC58CVG0S3HRAIJ".
The 8Gbit type "TH58CxG3S0HRAIJ" is new to Kioxia's serial NAND lineup and
the prefix was changed from "TC58" to "TH58".
Thus the functions were renamed from tc58cxgxsx_*() to tx58cxgxsxraix_*().
Signed-off-by: Yoshio Furuyama <ytc-mb-yfuruyama7@kioxia.com>
Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Link: https://lore.kernel.org/linux-mtd/0dedd9869569a17625822dba87878254d253ba0e.1584949601.git.ytc-mb-yfuruyama7@kioxia.com
Currently there are 3 different variants of read_id implementation:
1. opcode only. Found in GD5FxGQ4xF.
2. opcode + 1 addr byte. Found in GD5GxGQ4xA/E
3. opcode + 1 dummy byte. Found in other currently supported chips.
Original implementation was for variant 1 and let detect function
of chips with variant 2 and 3 to ignore the first byte. This isn't
robust:
1. For chips of variant 2, if SPI master doesn't keep MOSI low
during read, chip will get a random id offset, and the entire id
buffer will shift by that offset, causing detect failure.
2. For chips of variant 1, if it happens to get a devid that equals
to manufacture id of variant 2 or 3 chips, it'll get incorrectly
detected.
This patch reworks detect procedure to address problems above. New
logic do detection for all variants separatedly, in 1-2-3 order.
Since all current detect methods do exactly the same id matching
procedure, unify them into core.c and remove detect method from
manufacture_ops.
Tested on GD5F1GQ4UAYIG and W25N01GVZEIG.
Signed-off-by: Chuanhong Guo <gch981213@gmail.com>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Link: https://lore.kernel.org/linux-mtd/20200208074439.146296-1-gch981213@gmail.com
Add a comment above NAND_MFR_TOSHIBA and SPINAND_MFR_TOSHIBA definitions
that Toshiba and Kioxia ID are the same.
Since its independence from Toshiba Group, Toshiba memory Co has become
Kioxia Co.
Signed-off-by: Yoshio Furuyama <ytc-mb-yfuruyama7@kioxia.com>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Link: https://lore.kernel.org/linux-mtd/1581051561-7302-1-git-send-email-ytc-mb-yfuruyama7@kioxia.com
Toshiba recently launched new revisions of their serial SLC NAND series.
TC58CVG2S0HRAIJ is a refresh of previous series with minor improvements.
Basic parameters are same so lets add support for this new revision.
Datasheet: https://business.kioxia.com/info/docget.jsp?did=58601&prodName=TC58CVG2S0HRAIJ
Tested under kernel 5.4.7.
Signed-off-by: Robert Marko <robert.marko@sartura.hr>
Cc: Luka Perkov <luka.perkov@sartura.hr>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
NAND datasheets usually give the maximum number of bad blocks per LUN
and this number can be used to help upper layers decide how much blocks
they should reserve for bad block handling.
Add a max_bad_eraseblocks_per_lun to the nand_memory_organization
struct and update the NAND_MEMORG() macro (and its users) accordingly.
We also provide a default mtd->_max_bad_blocks() implementation.
Signed-off-by: Boris Brezillon <bbrezillon@kernel.org>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
Yoshio Furuyama