thermal: exynos: remove parsing of samsung, tmu_reference_voltage property
Since pdata reference_voltage values are SoC (not platform) specific just move it from platform data to struct exynos_tmu_data instance. Then remove parsing of samsung,tmu_reference_voltage property. There should be no functional changes caused by this patch. Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com> Reviewed-by: Daniel Lezcano <daniel.lezcano@linaro.org> Signed-off-by: Eduardo Valentin <edubezval@gmail.com>
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drivers/thermal/samsung
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@ -123,6 +123,8 @@
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#define EXYNOS5433_PD_DET_EN 1
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#define EXYNOS5433_G3D_BASE 0x10070000
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/*exynos5440 specific registers*/
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#define EXYNOS5440_TMU_S0_7_TRIM 0x000
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#define EXYNOS5440_TMU_S0_7_CTRL 0x020
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@ -190,6 +192,9 @@
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* @max_efuse_value: maximum valid trimming data
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* @temp_error1: fused value of the first point trim.
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* @temp_error2: fused value of the second point trim.
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* @reference_voltage: reference voltage of amplifier
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* in the positive-TC generator block
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* 0 < reference_voltage <= 31
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* @regulator: pointer to the TMU regulator structure.
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* @reg_conf: pointer to structure to register with core thermal.
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* @ntrip: number of supported trip points.
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@ -214,6 +219,7 @@ struct exynos_tmu_data {
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u32 min_efuse_value;
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u32 max_efuse_value;
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u16 temp_error1, temp_error2;
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u8 reference_voltage;
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struct regulator *regulator;
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struct thermal_zone_device *tzd;
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unsigned int ntrip;
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@ -369,7 +375,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
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con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
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con &= ~(EXYNOS_TMU_REF_VOLTAGE_MASK << EXYNOS_TMU_REF_VOLTAGE_SHIFT);
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con |= pdata->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
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con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
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con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
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con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
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@ -1136,8 +1142,6 @@ static int exynos_of_sensor_conf(struct device_node *np,
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ret = of_property_read_u32(np, "samsung,tmu_gain", &value);
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pdata->gain = (u8)value;
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of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);
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pdata->reference_voltage = (u8)value;
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of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
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@ -1192,6 +1196,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_read = exynos4210_tmu_read;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 4;
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data->reference_voltage = 7;
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data->efuse_value = 55;
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data->min_efuse_value = 40;
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data->max_efuse_value = 100;
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@ -1208,6 +1213,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos4412_tmu_set_emulation;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 4;
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data->reference_voltage = 16;
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data->efuse_value = 55;
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if (data->soc != SOC_ARCH_EXYNOS5420 &&
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data->soc != SOC_ARCH_EXYNOS5420_TRIMINFO)
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@ -1223,6 +1229,10 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos4412_tmu_set_emulation;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 8;
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if (res.start == EXYNOS5433_G3D_BASE)
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data->reference_voltage = 23;
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else
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data->reference_voltage = 16;
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data->efuse_value = 75;
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data->min_efuse_value = 40;
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data->max_efuse_value = 150;
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@ -1234,6 +1244,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos5440_tmu_set_emulation;
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data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
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data->ntrip = 4;
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data->reference_voltage = 16;
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data->efuse_value = 0x5d2d;
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data->min_efuse_value = 16;
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data->max_efuse_value = 76;
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@ -1245,6 +1256,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
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data->tmu_set_emulation = exynos4412_tmu_set_emulation;
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data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
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data->ntrip = 8;
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data->reference_voltage = 17;
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data->efuse_value = 75;
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data->min_efuse_value = 15;
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data->max_efuse_value = 100;
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@ -42,16 +42,12 @@ enum soc_type {
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* struct exynos_tmu_platform_data
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* @gain: gain of amplifier in the positive-TC generator block
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* 0 < gain <= 15
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* @reference_voltage: reference voltage of amplifier
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* in the positive-TC generator block
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* 0 < reference_voltage <= 31
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* @cal_type: calibration type for temperature
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*
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* This structure is required for configuration of exynos_tmu driver.
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*/
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struct exynos_tmu_platform_data {
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u8 gain;
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u8 reference_voltage;
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u32 cal_type;
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};
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