This patch adds a proper prototype for onenand_bbt_read_oob() in
include/linux/mtd/onenand.h
Signed-off-by: Adrian Bunk <bunk@kernel.org>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
The 2X Program is an extension of Program Operation.
Since the device is equipped with two DataRAMs, and two-plane NAND Flash
memory array, these two component enables simultaneous program of 4KiB.
Plane1 has only even blocks such as block0, block2, block4 while Plane2
has only odd blocks such as block1, block3, block5.
So MTD regards it as 4KiB page size and 256KiB block size
Now the following chips support it. (KFXXX16Q2M)
Demux: KFG2G16Q2M, KFH4G16Q2M, KFW8G16Q2M,
Mux: KFM2G16Q2M, KFN4G16Q2M,
And more recent chips
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
Classify the page data and oob buffer
and it prevents the memory fragementation (writesize + oobsize)
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
It use blockpage instead of a pair (block, page). It can also cover a small chunk access. 0x00, 0x20, 0x40 and so on.
And in JFFS2 behavior, sometimes it reads two pages alternatively.
e.g., It first reads A page, B page and A page.
So we check another bufferram to find requested page.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
We can use the two methods to wait.
1. polling: read interrupt status register
2. interrupt: use kernel ineterrupt mechanism
To use interrupt method, you first connect onenand interrupt pin to your
platform and configure interrupt properly
Signed-off-by: Kyungmin Park <kyungmin.park at samsung.com>
OneNAND lock scheme depends on density and process of chip.
Some OneNAND chips support all block unlock
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
Fix some kernel-doc typos/spellos.
Use kernel-doc syntax in places where it was almost used.
Correct/add struct, struct field, and function param names where needed.
Signed-off-by: Randy Dunlap <rdunlap@xenotime.net>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
The nand_oobinfo structure is not fitting the newer error correction
demands anymore. Replace it by struct nand_ecclayout and fixup the users
all over the place. Keep the nand_oobinfo based ioctl for user space
compability reasons.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
One Block of the NAND Flash Array memory is reserved as
a One-Time Programmable Block memory area.
Also, 1st Block of NAND Flash Array can be used as OTP.
The OTP block can be read, programmed and locked using the same
operations as any other NAND Flash Array memory block.
OTP block cannot be erased.
OTP block is fully-guaranteed to be a valid block.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
This (and the three subsequent patches) is working well on OMAP H4 with
2.6.15-rc4 kernel and passes the LTP fs test.
Signed-off-by: Linus Torvalds <torvalds@osdl.org>
Add density mask for better support of DDP chips.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
- Update OMAP OneNAND mapping file using device driver model
- Remove board specific macro and values.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Add OneNAND Sync. Burst Read support
Tested with OMAP platform
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
OneNAND is a new flash technology from Samsung with integrated SRAM
buffers and logic interface.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Adrian Bunk